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部品型式

2SC2879A

製品説明
仕様・特性

2SC2879A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879A 2~30MHz SSB Linear Power Amplifier Applications (Low Supply Voltage Use) Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 100WPEP Power Gain : Gp = 13dB Collector Efficiency : ηC = 35% (Min.) Intermodulation Distortion : IMD = −24dB(Max.) (MIL Standard) Absolute Maximum Ratings (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage VCES 45 V Collector-Emitter Voltage VCEO 18 V Emitter-Base Voltage VEBO 4 V Collector Current IC 25 A Collector Power Dissipation PC 250 W Junction Temperature Tj 175 °C Tstg −65~175 °C Storage Temperature Range — JEDEC — EIAJ 2–13B1A TOSHIBA Weight: 5.2g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking TOSHIBA 2SC2879 JAPAN Dot Lot No. 1 2007-11-01

ブランド

TOSHIBA

会社名

株式会社 東芝セミコンダクター&ストレージ社

本社国名

日本

事業概要

半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI

供給状況

 
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