TC7WH125FU/FK
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7WH125FU,TC7WH125FK
Dual Bus Buffer with 3-STATE Output
Features
•
•
5.5-V tolerant inputs
•
Wide operating voltage range: VCC = 2.0 to 5.5V
•
TC7WH125FU
High speed tpd = 3.8ns (typ.) at VCC = 5.0 V, CL=15pFLow
power dissipation: ICC = 2μA (max) at Ta = 25°CHigh noise
immunity : VNIH = VNIL = 28%VCC (min)
Low Noise: VOLP = 0.8V (max)
(SM8)
TC7WH125FK
Marking
SM8
H 125
Product name
US8
Lot. No
WH
125
(US8)
Weight
SSOP8-P-0.65 : 0.02 g (typ.)
SSOP8-P-0.50A : 0.01 g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Pin Assignment (top view)
Symbol
Rating
Unit
Supply voltage
VCC
−0.5 to 7.0
V
DC input voltage
VIN
−0.5 to 7.0
V
G1 1
8 VCC
V
A1 2
7 G2
Y2 3
6 Y1
GND 4
5 A2
DC output voltage
VOUT
−0.5 to Vcc + 0.5
Input diode current
IIK
−20
mA
Output diode current
IOK
±20 (Note 1)
mA
DC output current
IOUT
±25
mA
DC VCC / GND current
ICC
±50
mA
Power dissipation
PD
300 (SM8)
200 (US8)
mW
Storage temperature
Tstg
−65 to 150
°C
TL
260
°C
Lead temperature (10s)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: VOUT < GND, VOUT > VCC
1
2009-09-24
