TC58FVM7(T/B)5B(TG/XG)65
TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS
128M (8M × 16 BITS) CMOS FLASH MEMORY
1. DESCRIPTION
Lead-Free
The TC58FVM7(T/B)5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as
8388608 × 16 bits. The TC58FVM7(T/B)5B features commands for Read, Program and Erase operations to allow easy interfacing
with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically
executed in the chip. The TC58FVM7(T/B)5B also features a Simultaneous Read/Write operation so that data can be read during a
Write or Erase operation.
2. FEATURES
•
•
•
•
Power supply voltage
VDD = 2.7V to 3.6V
Operating ambient temperature
Ta = -40°C to 85°C
Organization
8M × 16 Bits
Functions
Simultaneous Read/Write
Page Read
Auto Program, Auto Page Program
Auto Block Erase, Auto Chip Erase
Fast Program Mode/Acceleration Mode
Program Suspend/Resume
Erase Suspend/Resume
Data polling/Toggle bit
Password block protection
Block protection/ Boot block protection
Automatic Sleep, support for hidden ROM area
Common Flash memory Interface (CFI)
•
•
•
•
•
•
•
•
•
•
Block erase architecture
8 × 8 Kbytes / 255 × 64 Kbytes
Bank architecture
8M Bits × 16 Bank
Boot Block architecture
TC58FVM7T5B … top boot block
TC58FVM7B5B … bottom boot block
Mode control
Compatible with JEDEC standard commands
Erase/Program cycles
105 cycles typ
Access Time (Random/Page)
65ns / 25ns
(CL=30pF)
70ns / 30ns
(CL=100pF)
Page Length: 8 words
Power consumption
10 μA (Standby)
15mA (Program/Erase operation)
5mA (Page Read operation)
55mA (Random Read operation)
11mA (Address Increment Read operation)
Package
TC58FVM7(T/B)5BTG
TSOP Ⅰ 56-P-1420-0.50
(weight: 0.60g)
TC58FVM7(T/B)5BXG
P-TFBGA80-0810-0.80AZ
(weight: 0.157g)
Lead-Free
2006-05-10 1/88
