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2SD2117
2SD2117 Transistors NPN Darlington Transistor Military/High-RelN V(BR)CEO (V)50 V(BR)CBO (V)80 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.4.0k h(FE) Max. Current gain. @I(C) (A) (Test Condition)500m @V(CE) (V) (Test Condition)2.0 f(T) Min. (Hz) Transition Freq120MÂ @I(C) (A) (Test Condition)50m @V(CE) (V) (Test Condition)10 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)500m @I(B) (A) (Test Condition)500u t(d) Max. (s) Delay time. t(r) Max. (s) Rise time t(on) Max. (s) On time.
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