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MT3S35T
MT3S35T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S35T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES • Low Noise Figure :NF=1.4dB (@f=2GHz) • High Gain:|S21e|2=13.0dB (@f=2GHz) Marking 3 Q2 1 2 TESM JEDEC JEITA Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-Base voltage VCBO 8 VCEO 4.5 VEBO 1.5 IC 24 mA Base-Current IB 12 mA Collector Power dissipation PC 100 mW Junction temperature Tj 150 °C Tstg −55~150 2-1B1A V Collector-Current TOSHIBA V Emitter-Base voltage ― V Collector-Emitter voltage ― °C Weight:0.0022g (typ.) Storage temperature Range Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-11-01
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