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2SB1463JRL

製品説明
仕様・特性

Transistors 2SB1463 Silicon PNP epitaxial planar type Unit: mm For high breakdown voltage low-frequency amplification Complementary to 2SD2240 0.2+0.1 –0.05 0.15+0.1 –0.05 (0.4) 2 5˚ ■ Absolute Maximum Ratings Ta = 25°C Rating Unit VCBO −150 V Collector-emitter voltage (Base open) VCEO −150 V Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −50 ICP −100 mA Collector power dissipation PC 125 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 1: Base 2: Emitter 3: Collector EIAJ: SC-75 SSMini3-G1 Package mA Peak collector current 0.45±0.1 Symbol 0 to 0.1 Parameter Collector-base voltage (Emitter open) 0.75±0.15 1 (0.5) (0.5) 1.0±0.1 1.6±0.1 (0.3) pla d in ea ne clu se pla m d de vis ht ne ai ma s fo tp it f :// ol d d d nte inte llow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 0.2±0.1 0.8±0.1 1.6±0.15 ■ Features 1˚ M Di ain sc te on na tin nc ue e/ d 3 °C Marking Symbol: I ■ Electrical Characteristics Ta = 25°C ± 3°C ue Symbol Conditions Min VCEO IC = −100 µA, IB = 0 Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 VCB = −100 V, IE = 0 Max −5 ICBO Typ −150 Di sc Parameter on tin Collector-emitter voltage (Base open) hFE VCE = −5 V, IC = −10 mA Collector-emitter saturation voltage VCE(sat) IC = −30 mA, IB = −3 mA te na Collector-base cutoff current (Emitter open) Collector output capacitance (Common base, input open circuited) Cob VCB = −10 V, IE = 0, f = 1 MHz Noise voltage NV VCE = −10 V, IC = −1 mA, GV = 80 dB Rg = 100 kΩ, Function = FLAT nc e/ Forward current transfer ratio * VCB = −10 V, IE = 10 mA, f = 200 MHz fT V V −1 µA 450  −1 V 200 MHz 4 pF 150 mV Pl M ain Transition frequency 130 Unit Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R S T hFE 130 to 220 185 to 330 260 to 450 Publication date: January 2003 SJC00089BED 1

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