Transistors
2SB1463
Silicon PNP epitaxial planar type
Unit: mm
For high breakdown voltage low-frequency amplification
Complementary to 2SD2240
0.2+0.1
–0.05
0.15+0.1
–0.05
(0.4)
2
5˚
■ Absolute Maximum Ratings Ta = 25°C
Rating
Unit
VCBO
−150
V
Collector-emitter voltage (Base open)
VCEO
−150
V
Emitter-base voltage (Collector open)
VEBO
−5
V
Collector current
IC
−50
ICP
−100
mA
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
1: Base
2: Emitter
3: Collector
EIAJ: SC-75
SSMini3-G1 Package
mA
Peak collector current
0.45±0.1
Symbol
0 to 0.1
Parameter
Collector-base voltage (Emitter open)
0.75±0.15
1
(0.5) (0.5)
1.0±0.1
1.6±0.1
(0.3)
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• High collector-emitter voltage (Base open) VCEO
• Low noise voltage NV
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
0.2±0.1
0.8±0.1
1.6±0.15
■ Features
1˚
M
Di ain
sc te
on na
tin nc
ue e/
d
3
°C
Marking Symbol: I
■ Electrical Characteristics Ta = 25°C ± 3°C
ue
Symbol
Conditions
Min
VCEO
IC = −100 µA, IB = 0
Emitter-base voltage (Collector open)
VEBO
IE = −10 µA, IC = 0
VCB = −100 V, IE = 0
Max
−5
ICBO
Typ
−150
Di
sc
Parameter
on
tin
Collector-emitter voltage (Base open)
hFE
VCE = −5 V, IC = −10 mA
Collector-emitter saturation voltage
VCE(sat)
IC = −30 mA, IB = −3 mA
te
na
Collector-base cutoff current (Emitter open)
Collector output capacitance
(Common base, input open circuited)
Cob
VCB = −10 V, IE = 0, f = 1 MHz
Noise voltage
NV
VCE = −10 V, IC = −1 mA, GV = 80 dB
Rg = 100 kΩ, Function = FLAT
nc
e/
Forward current transfer ratio *
VCB = −10 V, IE = 10 mA, f = 200 MHz
fT
V
V
−1
µA
450
−1
V
200
MHz
4
pF
150
mV
Pl
M
ain
Transition frequency
130
Unit
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
T
hFE
130 to 220
185 to 330
260 to 450
Publication date: January 2003
SJC00089BED
1