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FX20ASJ
MITSUBISHI Pch POWER MOSFET Y NAR I FX20ASJ-2 ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL P HIGH-SPEED SWITCHING USE FX20ASJ-2 OUTLINE DRAWING 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 Dimensions in mm 1.0 2.3 0.9 max 10 max 2.3 2.3 min 1.0 max 5.5 ± 0.2 4 A 0.5 ± 0.2 2.3 0.8 1 2 3 3 • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) ................................................ 0.26Ω • ID .................................................................... –20A • Integrated Fast Recovery Diode (TYP.) .........100ns 1 2 3 4 1 GATE DRAIN SOURCE DRAIN 2 4 MP-3 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Ratings Unit VDSS VGSS Drain-source voltage Gate-source voltage VGS = 0V VDS = 0V –100 ±20 V V ID IDM IDA Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) L = 50µH –20 –80 –20 A A A IS ISM PD Tch Tstg Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature –20 –80 35 –55 ~ +150 –55 ~ +150 A A W °C °C 0.26 g — Parameter Weight Conditions Typical value Jan.1999
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