PD - 97004A
IRFB4233PbF
PDP SWITCH
Features
l Advanced process technology
l Key parameters optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l Low EPULSE rating to reduce power dissipation
in PDP Sustain, Energy Recovery and Pass
Switch Applications
l Low QG for fast response
l High repetitive peak current capability for
reliable operation
l Short fall & rise times for fast switching
l175°C operating junction temperature for
improved ruggedness
l Repetitive avalanche capability for robustness
and reliability
Key Parameters
VDS min
230
V
VDS (Avalanche) typ.
276
RDS(ON) typ. @ 10V
31
V
m:
IRP max @ TC= 100°C
114
A
TJ max
175
°C
D
G
S
TO-220AB
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Max.
Parameter
Units
Gate-to-Source Voltage
±30
V
Continuous Drain Current, VGS @ 10V
56
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
39
220
VGS
ID @ TC = 25°C
c
IDM
Pulsed Drain Current
IRP @ TC = 100°C
Repetitive Peak Current
PD @TC = 25°C
Power Dissipation
370
PD @TC = 100°C
Power Dissipation
190
Linear Derating Factor
2.5
W/°C
TJ
Operating Junction and
-40 to + 175
°C
TSTG
Storage Temperature Range
g
114
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
x
300
W
x
10lb in (1.1N m)
N
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
f
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
f
Typ.
Max.
Units
–––
0.50
–––
0.402
–––
62
°C/W
Notes through are on page 8
www.irf.com
1
09/14/07
