Si4880DY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0085 at VGS = 10 V
± 13
0.014 at VGS = 4.5 V
30
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETS
• High-Efficiency
• PWM Optimized
• Compliant to RoHS Directive 2002/95/EC
ID (A)
± 10
D
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
G
N-Channel MOSFET
Top View
Ordering Information: Si4880DY-T1-E3 (Lead (Pb)-free)
Si4880DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 25
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C
TA = 25 °C
2.3
2.5
PD
TA = 70 °C
W
1.6
TJ, Tstg
Operating Junction and Storage Temperature Range
A
± 50
IS
Continuous Source Current (Diode Conduction)a, b
Maximum Power Dissipationa, b
± 10
IDM
Pulsed Drain Current (10 µs Pulse Width)
V
± 13
ID
TA = 70 °C
Unit
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)a
Symbol
t ≤ 10 s
Steady State
RthJA
Typical
Maximum
50
70
Unit
°C/W
Notes:
a. Surface mounted on FR4 board.
b. t ≤ 10 s.
Document Number: 70857
S09-0869-Rev. C, 18-May-09
www.vishay.com
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