Data Sheet
Schottky barrier diode
RB225T-60
Structure
4.5±0.3
0.1
2.8±0.2
0.1
10.0±0.3
0.1
ec
N
ew om
m
D
es en
ig de
ns d
f
Features
1) Cathode common type.
(TO-220)
2) Low IR
3) High reliability
or
Applications
Dimensions (Unit : mm)
Switching power supply
1.2
8.0±0.2
12.0±0.2
13.5MIN
Construction
Silicon epitaxial planar
5.0±0.2
①
15.0±0.4
0.2
8.0
(1) (2) (3)
1.3
0.8
(1) (2) (3)
0.7±0.1
0.05
2.6±0.5
ROHM : ＴO220FN
①
Manufacture Date
Absolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
60
VRM
Reverse voltage (repetitive peak)
Reverse voltage (DC)
60
VR
30
Average rectified forward current(*1)
Io
100
IFSM
Forward current surge peak (60Hz/1cyc) (*1)
Junction temperature
150
Tj
Storage temperature
40 to 150
Tstg
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=108C
ot
R
Unit
V
V
A
A
Electrical characteristic (Ta=25C)
Parameter
Symbol
VF
Reverse characteristics
Thermal impedance
IR
-
-
600
μA
jc
-
-
1.75
C/W
N
Forward characteristics
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Min.
-
1/3
Typ.
-
C
C
Max.
0.63
Unit
V
Conditions
IF=15A
VR=60V
junction to case
2011.04 - Rev.C
