PD - 95513D
IRFR3710ZPbF
IRFU3710ZPbF
IRFU3710Z-701PbF
Features
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Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Multiple Package Options
Lead-Free
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 18mΩ
G
Description
ID = 42A
S
HEXFET®
This
Power MOSFET utilizes the
latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional
features of this design are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in a wide
variety of applications.
D-Pak
I-Pak
IRFR3710ZPbF IRFU3710ZPbF
I-Pak Leadform 701
IRFU3710Z-701PbF
Refer to page 11 for package outline
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS (Thermally limited)
EAS (Tested )
IAR
EAR
TJ
TSTG
Max.
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
56
39
42
220
140
0.95
± 20
150
200
See Fig.12a, 12b, 15, 16
d
Ã
h
g
Units
A
W
W/°C
V
mJ
A
mJ
-55 to + 175
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
Typ.
i
Max.
Units
–––
–––
–––
1.05
50
110
°C/W
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
09/27/10
