PD- 95023C
IRF7811WPbF
HEXFET® Power MOSFET for DC-DC Converters
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N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
100% Tested for Rg
Lead-Free
A
D
S
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
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7
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The IRF7811WPbF has been optimized for all parameters
that are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7811WPbF offers particulary low RDS(on) and high
Cdv/dt immunity for synchronous FET applications.
8
S
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
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T o p V ie w
DEVICE CHARACTERISTICS
IRF7811WPbF
RDS(on)
9.0mΩ
QG
22nC
Qsw
10.1nC
Qoss
12nC
Absolute Maximum Ratings
Parameter
Symbol
TA = 25°C
Current (VGS ≥ 4.5V)
±12
ID
14
IDM
Continuous Drain or Source
30
VGS
Gate-Source Voltage
IRF7811WPbF
VDS
Drain-Source Voltage
109
TL = 90°C
Pulsed Drain Current
Power Dissipation
TA = 25°C
13
PD
TL = 90°C
3.1
Units
V
A
W
3.0
TJ, TSTG
–55 to 150
°C
Continuous Source Current (Body Diode)
IS
3.8
A
Pulsed Source Current
ISM
109
Parameter
Maximum Junction-to-Ambient
RθJA
Max.
40
Units
°C/W
Maximum Junction-to-Lead
RθJL
20
°C/W
Junction & Storage Temperature Range
Thermal Resistance
www.irf.com
1
01/06/09
