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IRFS4321PBF
PD - 97105C IRFS4321PbF IRFSL4321PbF Applications Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits l Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching Performance l Improved Diode Recovery Improves Switching & EMI Performance l 30V Gate Voltage Rating Improves Robustness l Fully Characterized Avalanche SOA HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID 150V 12m: 15m: 85A c D D G D G D S G D S D2Pak TO-262 IRFS4321PbF IRFSL4321PbF S G D S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C Parameter Max. Units 85 c Continuous Drain Current, VGS @ 10V A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 60 IDM Pulsed Drain Current d 330 PD @TC = 25°C Maximum Power Dissipation 350 W Linear Derating Factor 2.3 Gate-to-Source Voltage Single Pulse Avalanche Energy e ±30 W/°C V 120 mJ -55 to + 175 °C VGS EAS (Thermally limited) TJ Operating Junction and TSTG Storage Temperature Range 300 Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case g ––– 0.43* °C/W RθJA Junction-to-Ambient g ––– 40 * RθJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium. Notes through are on page 2 www.irf.com 1 12/9/10
IR
International Rectifier
U.S.A
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