PD - 96900C
IRF6665
DIGITAL AUDIO MOSFET
Features
• Latest MOSFET Silicon technology
• Key parameters optimized for Class-D audio amplifier
applications
• Low RDS(on) for improved efficiency
• Low Qg for better THD and improved efficiency
• Low Qrr for better THD and lower EMI
• Low package stray inductance for reduced ringing and lower
EMI
• Can deliver up to 100W per channel into 8Ω with no heatsink
• Dual sided cooling compatible
· Compatible with existing surface mount technologies
· RoHS compliant containing no lead or bromide
Key Parameters
100
VDS
RDS(on) typ. @ VGS = 10V
Qg typ.
RG(int) typ.
SH
53
8.7
V
m:
nC
1.9
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
SQ
SX
ST
SH
MQ
MX
MT
MN
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as
efficiency, THD, and EMI.
The IRF6665 device utilizes DirectFET TM packaging technology. DirectFET TM packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET TM package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The
DirectFET TM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for
Class-D audio amplifier applications.
Absolute Maximum Ratings
Max.
Units
VDS
Drain-to-Source Voltage
Parameter
100
V
VGS
Gate-to-Source Voltage
± 20
ID @ TC = 25°C
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
19
4.2
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
3.4
IDM
Pulsed Drain Current
34
PD @TC = 25°C
c
Maximum Power Dissipation
42
Power Dissipation
A
2.2
PD @TA = 70°C
e
Power Dissipation e
TJ
Linear Derating Factor
Operating Junction and
TSTG
W
Storage Temperature Range
PD @TA = 25°C
1.4
0.017
-40 to + 150
W/°C
°C
Thermal Resistance
Parameter
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
ek
Junction-to-Ambient hk
Junction-to-Ambient ik
Junction-to-Case jk
Junction-to-Ambient
Junction-to-PCB Mounted
Notes through are on page 2
www.irf.com
Typ.
Max.
Units
°C/W
–––
58
12.5
–––
20
–––
–––
3.0
1.4
–––
1
11/16/05
