Freescale Semiconductor
Technical Data
Document Number: MRFE6P3300H
Rev. 2, 12/2009
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies from 470 to 860 MHz. The high gain and broadband performance
of this device make it ideal for large- signal, common- source amplifier
applications in 32 volt analog or digital television transmitter equipment.
• Typical Narrowband Two-T one Performance @ 860 MHz: VDD = 32 Volts,
IDQ = 1600 mA, Pout = 270 Watts PEP
ąPower Gain — 20.4 dB
ąDrain Efficiency — 44.8%
ąIMD — -28.8 dBc
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Designed for Push-Pull Operation Only
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
MRFE6P3300HR3
860 MHz, 300 W, 32 V
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 375G-04, STYLE 1
NI-860C3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +66
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Storage Temperature Range
Tstg
-ā65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 300 W CW
Case Temperature 82°C, 220 W CW
Case Temperature 79°C, 100 W CW
Case Temperature 81°C, 60 W CW
°C/W
RθJC
0.23
0.24
0.27
0.27
ăĂ1. Continuous use at maximum temperature will affect MTTF.
Ăă2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Ăă3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007-2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6P3300HR3
1
