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LN222RPX
This product complies with the RoHS Directive (EU 2002/95/EC). Light Emitting Diodes LN222RPX Round Type φ2.0 mm Absolute Maximum Ratings Ta = 25°C Parameter Lighting Color Symbol Rating Power dissipation PD 70 mW Forward current IF 25 mA Pulse forward current * IFP 150 mA Reverse voltage VR 4 V Operating ambient temperature Topr –25 to +85 °C Storage temperature Tstg –30 to +100 Red Unit °C Note) *: The condition of IFP is duty 10%, Pulse width 1 msec. Electro-Optical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ 0.2 Max Unit 0.6 Luminous intensity IO Reverse current IR VR = 4 V Forward voltage VF IF = 20 mA 2.2 Peak emission wavelength λP IF = 20 mA 700 nm Spectral half band width Δλ IF = 20 mA 100 nm IO IF 3 1 0.5 0.3 0.1 1 3 5 10 30 50 30 10 5 3 1.6 2.0 2.2 30 40° 60 30° 20° 10° 70° Peak emission wavelength λP (nm) 20 40 60 80 100 30° 40 30 40° 50° 70° 20° 80 60 40 20 0 20 60° 40° 80° 90° 100 10° 20° 60° 60° 40 0° 80° 50° 800 0 IF Ta 80 Publication date: November 2008 50 Ambient temperature Ta (°C) Directive characteristics 700 100 50 100 600 300 10 −20 2.4 Relative luminous intensity λP 0 500 500 Forward voltage VF (V) 20 V Forward current IF (mA) Relative luminous intensity (%) Forward current IF (mA) 1.8 2.8 Relative luminous intensity Ta 50 1 100 µA 1000 Relative luminous intensity (%) 5 5 IF VF 100 Forward current IF (mA) Luminous intensity IO (mcd) 10 mcd 80° 20 40 60 Relative luminous intensity (%) SHD00513BEK 80 90° 100 10 0 0 20 40 60 80 100 Ambient temperature Ta (°C) 1
PANASONIC
パナソニック株式会社
日本
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