Serial Quad I/O (SQI) Flash Memory
SST26VF016 / SST26VF032
SST25VF016B16Mb Serial Peripheral Interface (SPI) flash memory
Data Sheet
FEATURES:
• Single Voltage Read and Write Operations
– 2.7-3.6V
• Serial Interface Architecture
– Nibble-wide multiplexed I/O’s with SPI-like serial
command structure
- Mode 0 and Mode 3
– Single-bit, SPI backwards compatible
- Read, High-Speed Read, and JEDEC ID Read
• High Speed Clock Frequency
– 80 MHz
- 320 Mbit/s sustained data rate
• Burst Modes
– Continuous linear burst
– 8/16/32/64 Byte linear burst with wrap-around
• Index Jump
– Jump to address index within 256 Byte Page
– Jump to address index within 64 KByte Block
– Jump to address index in another 64 KByte Block
• Superior Reliability
– Endurance: 100,000 cycles
– Greater than 100 years data retention
• Low Power Consumption:
– Active Read current: 12 mA (typical @ 80 MHz)
– Standby current: 8 µA (typical)
• Fast Erase and Byte-Program:
– Chip-Erase time: 35 ms (typical)
– Sector-/Block-Erase time: 18 ms (typical)
• Page-Program
– 256 Bytes per page
– Fast Page Program time in 1 ms (typical)
• End-of-Write Detection
– Software polling the BUSY bit in status register
• Flexible Erase Capability
– Uniform 4 KByte sectors
– Four 8 KByte top parameter overlay blocks
– Four 8 KByte bottom parameter overlay blocks
– Two 32 KByte overlay blocks (one each top and
bottom)
– Uniform 64 KByte overlay blocks
- SST26VF016 – 30 blocks
- SST26VF032 – 62 blocks
• Write-Suspend
– Suspend program or Erase operation to access
another block/sector
• Software Reset (RST) mode
• Software Write Protection
– Block-Locking
- 64 KByte blocks, two 32 KByte blocks, and eight
8 KByte parameter blocks
• Security ID
– One-Time Programmable (OTP) 256 bit, Secure ID
- 64 bit Unique, factory pre-programmed identifier
- 192 bit user-programmable
• Temperature Range
– Industrial: -40°C to +85°C
• Packages Available
– 8-contact WSON (6mm x 5mm)
– 8-lead SOIC (200 mil)
• All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The Serial Quad I/O™ (SQI™) family of flash-memory
devices features a 4-bit, multiplexed I/O interface that
allows for low-power, high-performance operation in a low
pin-count package. System designs using SQI flash
devices occupy less board space and ultimately lower system costs.
All members of the 26 Series, SQI family are manufactured
with SST proprietary, high-performance CMOS SuperFlash® technology. The split-gate cell design and thickoxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.
©2009 Silicon Storage Technology, Inc.
S71359-03-000
06/09
1
The SST26VF016/032 significantly improve performance
and reliability, while lowering power consumption. These
devices write (Program or Erase) with a single power supply of 2.7-3.6V. The total energy consumed is a function of
the applied voltage, current, and time of application. Since
for any given voltage range, the SuperFlash technology
uses less current to program and has a shorter erase time,
the total energy consumed during any Erase or Program
operation is less than alternative flash memory technologies.
SST26VF016/032 are offered in both 8-contact WSON
(6 mm x 5 mm), and 8-lead SOIC (200 mil) packages. See
Figure 2 for pin assignments.
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.