PD - 97034
IRF4905SPbF
IRF4905LPbF
HEXFET® Power MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Some Parameters Are Differrent from
IRF4905S
Lead-Free
D
VDSS = -55V
RDS(on) = 20mΩ
G
ID = -42A
S
Description
D
Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of other
applications.
D
G
D
S
G
D2Pak
IRF4905SPbF
D
S
TO-262
IRF4905LPbF
G
Absolute Maximum Ratings
D
S
Gate
Drain
Source
Parameter
Max.
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
-44
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
Units
-70
-42
IDM
Pulsed Drain Current
-280
170
Gate-to-Source Voltage
EAS (Thermally limited) Single Pulse Avalanche Energy
d
EAS (Tested )
Single Pulse Avalanche Energy Tested Value
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
TJ
V
140
mJ
790
Operating Junction and
TSTG
h
W/°C
± 20
Linear Derating Factor
W
1.3
PD @TC = 25°C Power Dissipation
VGS
A
Storage Temperature Range
Ã
g
Mounting Torque, 6-32 or M3 screw
j
-55 to + 150
°C
300 (1.6mm from case )
y
i
Junction-to-Case
RθJA
Junction-to-Ambient (PCB Mount, steady state)
y
10 lbf in (1.1N m)
Parameter
RθJC
www.irf.com
A
mJ
Soldering Temperature, for 10 seconds
Thermal Resistance
See Fig.12a, 12b, 15, 16
Typ.
ij
Max.
–––
0.75
–––
40
Units
1
8/5/05
