PD - 97343
IRFS4010-7PPbF
HEXFET® Power MOSFET
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
D
G
S
VDSS
RDS(on) typ.
max.
ID
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
100V
3.3mΩ
4.0mΩ
190A
D
S
G
S
S
S
S
D2Pak 7 Pin
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Max.
Pulsed Drain Current c
Units
190
130
740
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
A
W
380
2.5
± 20
Operating Junction and
Storage Temperature Range
W/°C
V
26
-55 to + 175
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery e
V/ns
°C
300
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
10lbxin (1.1Nxm)
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
Single Pulse Avalanche Energy d
Avalanche Current c
Repetitive Avalanche Energy f
330
See Fig. 14, 15, 22a, 22b,
mJ
A
mJ
Thermal Resistance
Symbol
RθJC
RθJA
www.irf.com
Parameter
Typ.
Max.
Units
Junction-to-Case jk
–––
°C/W
Junction-to-Ambient (PCB Mount) ij
–––
0.40
40
1
10/07/08
