STN1N20
N-channel 200 V, 1.2 Ω 1 A, SOT-223
,
MESH OVERLAY™ Power MOSFET
Features
Type
RDS(on) max
ID
STN1N20
■
VDSS
200 V
< 1.5 Ω
1A
100% avalanche tested
3
du
o
1
Application
■
(s)
ct
4
2
Pr
e
SOT-223
Switching applications
let
o
Description
This device is an N-channel Power MOSFET
developed using the latest high voltage MESH
OVERLAY™ process. The new patented STrip
layout coupled with the company’s proprietary
edge termination structure, makes it suitable in
converters for lighting applications.
)(s
bs
O
Figure 1.
Internal schematic diagram
ct
u
od
r
P
e
let
o
bs
O
Table 1.
Device summary
Order code
Marking
Package
Packaging
STN1N20
N1N20
SOT-223
Tape and reel
June 2011
Doc ID 6772 Rev 3
1/12
www.st.com
12
