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MAZ9120DOLSO
This product complies with the RoHS Directive (EU 2002/95/EC). Zener Diodes MAZ9xxxH Series Silicon planar type Unit: mm 0.40+0.10 –0.05 For surge absorption circuit 0.16+0.10 –0.06 1.9±0.1 10˚ °C 1.1+0.3 –0.1 °C 1.1+0.2 –0.1 Tstg mW −55 to +150 Tj Storage temperature 200 PD Junction temperature Unit 150 Power dissipation * Rating 0 to 0.1 Symbol 0.4±0.2 d pla inc Pl ea ne lud se pla m d m es vis ne ain ain foll htt it d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at ion / . 2.90+0.20 –0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter 5˚ 2 1 (0.95) (0.95) (0.65) • Two elements anode-common type • Power dissipation PD : 200 mW 2.8+0.2 –0.3 M Di ain sc te on na tin nc ue e/ d ■ Features 1.50+0.25 –0.05 3 1: Cathode 1 2: Cathode 2 3: Anode Mini3-G1 Package Note) *: PD = 200 mW achieved with a printed circuit board. EIAJ: SC-59 Internal Connection 3 1 2 Parameter Zener voltage* ce /D isc on tin ue ■ Common Electrical Characteristics Ta = 25°C ± 3°C Symbol VZ RZK Zener operating resistance RZ en Reverse current an Zener rise operating resistance IR Conditions IZ Specified value IZ Specified value VR Specified value Typ Specified value IZ Min Refer to the list of the electrical characteristics within part numbers Max Unit V Ω Ω µA Ma int Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Electrostatic breakdown voltage: ±10 kV Test method: IEC1000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times) 3. *: The temperature must be controlled 25°C for VZ mesurement. VZ value measured at other temperature must be adjusted to VZ (25°C) VZ guaranted 20 ms after current flow. Publication date: November 2005 SKE00008DED 1
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パナソニック株式会社
日本
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