RJK0351DPA
Silicon N Channel Power MOS FET
Power Switching
REJ03G1646-0200
Rev.2.00
Apr 10, 2008
Features
•
•
•
•
•
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 3.2 mΩ typ. (at VGS = 10 V)
• Pb-free
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 6 7 8
D D D D
5 6 7 8
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
4
G
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
REJ03G1646-0200 Rev.2.00 Apr 10, 2008
Page 1 of 6
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-C
Tch
Tstg
Ratings
30
±20
40
160
40
17
28.9
45
2.78
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
