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SI7414DN
Si7414DN New Product Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.025 @ VGS = 10 V 8.7 0.036 @ VGS = 4.5 V 60 D TrenchFETr Power MOSFET D New Low Thermal Resistance D PowerPAKt 1212-8 Package with Low 1.07-mm Profile D PWM Optimized ID (A) 7.3 APPLICATIONS D Primary Side Switch D Synchronous Rectifier D Motor Drives PowerPAKt 1212-8 D S 3.30 mm 3.30 mm 1 S 2 S 3 G G 4 D 8 D 7 D 6 S D 5 N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 60 Gate-Source Voltage VGS "20 Unit Continuous Drain Current (TJ = 150_C)a _ TA = 25_C TA = 70_C Pulsed Drain Current 8.7 ID IS Single Avalanche Current L = 0.1 mH Single Avalanche Energy TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range 5.6 7.0 IDM Continuous Source Current (Diode Conduction)a V 4.4 A 30 3.2 IAS 1.3 19 EAS 18 mJ 3.8 PD 1.5 2.0 0.8 TJ, Tstg W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Case (Drain) Steady State Steady State RthJA RthJC Maximum 26 t v 10 sec Maximum Junction-to-Ambienta Typical 33 65 81 1.9 Unit 2.4 _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71738 S-04764—Rev. A, 08-Oct-01 www.vishay.com 1
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