This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD1328
Silicon NPN epitaxial planar type
For low-voltage output amplification
For muting
For DC-DC converter
Unit: mm
0.40+0.10
–0.05
0.16+0.10
–0.06
0.4±0.2
5˚
2
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(0.95) (0.95)
(0.65)
• Low collector-emitter saturation voltage VCE(sat)
• Low ON resistance Ron
• High foward current transfer ratio hFE
2.8+0.2
–0.3
■ Features
1.50+0.25
–0.05
M
Di ain
sc te
on na
tin nc
ue e/
d
3
1.9±0.1
2.90+0.20
–0.05
■ Absolute Maximum Ratings Ta = 25°C
10˚
Unit
25
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
12
V
0.5
A
1
A
200
mW
150
°C
−55 to +150
°C
Collector current
IC
Peak collector current
ICP
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
1.1+0.2
–0.1
Rating
VCBO
1.1+0.3
–0.1
Symbol
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
0 to 0.1
Parameter
Collector-base voltage (Emitter open)
Marking Symbol: 1D
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
ce
/D
isc
on
tin
■ Electrical Characteristics Ta = 25°C ± 3°C
Conditions
Min
Typ
Max
Unit
25
V
VCEO
IC = 1 mA, IB = 0
20
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 µA, IC = 0
12
Collector-base cutoff current (Emitter open)
ICBO
VCB = 25 V, IE = 0
ue
IC = 10 µA, IE = 0
Collector-emitter voltage (Base open)
hFE
VCE = 2 V, IC = 0.5 A
VCE(sat)
IC = 0.5 A, IB = 20 mA
VCE(sat)
an
en
int
Base-emitter saturation voltage
*1
fT
Ma
Transition frequency
Collector output capacitance
ON resistance
800
Cob
*3
200
0.13
nA
0.40
IC = 0.5 A, IB = 50 mA
Forward current transfer ratio *1,2
Collector-emitter saturation voltage *1
V
100
V
1.2
V
VCB = 10 V, IE = −50 mA, f = 200 MHz
200
MHz
VCB = 10 V, IE = 0, f = 1 MHz
10
pF
1.0
Ω
RON
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
*3: Ron Measuremet circuit
Rank
R
S
T
hFE
200 to 350
300 to 500
400 to 800
200 to 800
Marking symbol
1DR
1DS
1DT
1 kΩ
No-rank
1D
IB = 1 mA
VB
Product of no-rank is not classified and have no marking symbol for rank.
Ron =
Publication date: February 2003
SJC00216BED
f = 1 kHz
V = 0.3 V
VV
VA
VB
× 1 000 (Ω)
VA − VB
1
