STB4NK60Z, STB4NK60Z-1,
STD4NK60Z, STD4NK60Z-1
N-channel 600 V, 1.7 Ω typ., 4 A Zener-protected SuperMESH™
Power MOSFETs in D²PAK, I²PAK, DPAK and IPAK packages
Datasheet - production data
Features
TAB
TAB
Order codes
3
VDS
RDS(on) max.
PTOT
ID
600 V
3
2
1
2Ω
70 W
4A
1
STB4NK60ZT4
DPAK
IPAK
STB4NK60Z-1
STD4NK60ZT4
TAB
TAB
STD4NK60Z-1
• 100% avalanche tested
3
3
12
1
• Very low intrinsic capacitances
D²PAK
I²PAK
• Zener-protected
Figure 1. Internal schematic diagram
Applications
• Switching applications
D(2, TAB)
Description
G(1)
S(3)
AM01476v1
These devices are N-channel Zener-protected
Power MOSFETs developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in onresistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
Table 1. Device summary
Order codes
Marking
Packages
D2PAK
Tape and reel
I2PAK
Tube
DPAK
Tape and reel
IPAK
STB4NK60ZT4
Packaging
Tube
B4NK60Z
STB4NK60Z-1
STD4NK60ZT4
D4NK60Z
STD4NK60Z-1
July 2013
This is information on a product in full production.
DocID8882 Rev 8
1/26
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