2SK2917
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2917
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Low drain–source ON resistance
: RDS (ON) = 0.21 Ω (typ.)
High forward transfer admittance
Unit: mm
: |Yfs| = 17 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 500 V)
Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain–source voltage
VDSS
500
V
Drain–gate voltage (RGS = 20 kΩ)
VDGR
500
V
Gate–source voltage
VGSS
±30
V
(Note 1)
ID
18
Pulse (Note 1)
IDP
72
Drain power dissipation (Ta = 25°C)
PD
90
W
Single pulse avalanche energy
(Note 2)
EAS
915
mJ
Avalanche current
IAR
18
A
Repetitive avalanche energy (Note 3)
EAR
9
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
DC
Drain current
A
JEDEC
―
JEITA
―
TOSHIBA
2-16F1B
Weight: 5.8 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch–c)
1.39
°C / W
Thermal resistance, channel to ambient
Rth (ch–a)
41.6
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.8 mH, RG = 25 Ω, IAR = 18 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
2009-09-29
