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SE1450-004
SE1450 GaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24¡ (nominal) beam angle • 935 nm wavelength • Wide operating temperature range (- 55¡C to +125¡C) • Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and SD1410 photodarlington INFRA-63.TIF DESCRIPTION The SE1450 is a gallium arsenide infrared emitting diode mounted in a glass lensed, metal can coaxial package. The package may have a tab or second lead welded to the can as an optional feature (SE1450-XXXL). Both leads are flexible and may be formed as required to fit various mounting configurations. OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) SE1450-XXX .091(2.26) CATHODE (CASE) ANODE .020(0.51) DIA .062(1.57) DIA .079(2.01) .076(1.93) DIA .010(0.25) .095(2.41) DIA .122(3.10) .106(2.69) 1.000(25.40) MIN DIM_001a.ds4 SE1450-XXXL .091(2.26) .020 (0.51) DIA CATHODE ~ ~ .079(2.01) .076(1.93) DIA ANODE .020 (0.51) DIA ~ ~ .062(1.57) DIA .010(0.25) ~ ~ .095(2.41) DIA .122(3.10) .106(2.69) 1.000(25.40) TYPICAL MIN DIM_001b.ds4 8 h Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
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