a
Low Noise, Matched
Dual Monolithic Transistor
MAT02
PIN CONNECTION
FEATURES
Low Offset Voltage: 50 V max
Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max
High Gain (hFE):
500 min at IC = 1 mA
300 min at IC = 1 A
Excellent Log Conformance: rBE Ӎ 0.3 ⍀
Low Offset Voltage Drift: 0.1 V/؇C max
Improved Direct Replacement for LM194/394
TE
TO-78
(H Suffix)
PRODUCT DESCRIPTION
LE
NOTE
Substrate is connected to case on TO-78 package.
Substrate is normally connected to the most negative
circuit potential, but can be floated.
SO
The design of the MAT02 series of NPN dual monolithic transistors is optimized for very low noise, low drift and low rBE.
Precision Monolithics’ exclusive Silicon Nitride “TriplePassivation” process stabilizes the critical device parameters
over wide ranges of temperature and elapsed time. Also, the high
current gain (hFE) of the MAT02 is maintained over a wide
range of collector current. Exceptional characteristics of the
MAT02 include offset voltage of 50 µV max (A/E grades) and
150 µV max F grade. Device performance is specified over the
full military temperature range as well as at 25°C.
The MAT02 should be used in any application where low
noise is a priority. The MAT02 can be used as an input
stage to make an amplifier with noise voltage of less than
1.0 nV/√Hz at 100 Hz. Other applications, such as log/antilog
circuits, may use the excellent logging conformity of the
MAT02. Typical bulk resistance is only 0.3 Ω to 0.4 Ω. The
MAT02 electrical characteristics approach those of an ideal
transistor when operated over a collector current range of 1
µA to 10 mA. For applications requiring multiple devices
see MAT04 Quad Matched Transistor data sheet.
OB
Input protection diodes are provided across the emitter-base
junctions to prevent degradation of the device characteristics
due to reverse-biased emitter current. The substrate is clamped
to the most negative emitter by the parasitic isolation junction
created by the protection diodes. This results in complete isolation between the transistors.
REV. E
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reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
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© Analog Devices, Inc., 2002
