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NAND16GW3D2B

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NANDxxGW3F2A 8-Gbit, 16-Gbit, 4224-byte page, 3 V supply, single level, multiplane, NAND flash memory Preliminary Data Features ■ High density NAND flash memory – 8, 16 Gbits of memory array – Cost-effective solutions for mass storage applications ■ NAND interface – x8 bus width – Multiplexed address/data ■ Supply voltage: VDD = 2.7 to 3.6 V ■ Page size: (4096 + 128 spare) bytes ■ Block size: (256K + 8K spare) bytes ■ Multiplane architecture – Array split into two independent planes – All operations can be performed on both planes simultaneously TSOP48 12 x 20 mm (N) ■ Page read/program – Random access: 60 µs (max) – Sequential access: 25 ns (min) – Page program operation time: 200 µs (typ) ■ Copy-back program – Automatic block download without latency time Data protection – Hardware program/erase locked during power transitions ■ Security features – OTP area – Serial number option ■ Development tools – Error correction code models – Bad block management and wear leveling algorithm – HW simulation models ■ Data integrity – 100,000 program/erase cycles (with ECC) – 10 years data retention ■ ECOPACK® packages available Multipage program time (2 pages): 200 µs (typ) ■ ■ ■ Fast block erase – Block erase time: 1.5 ms (typ) – Multiblock erase time (2 blocks): 1.5 ms (typ) ■ Status register ■ Electronic signature ■ Chip enable ‘don’t care’ October 2008 Rev 2 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/65 www.numonyx.com 1

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