JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
2SC4180
TRANSISTOR (NPN)
FEATURES
SOT–323
High DC Current Gain
APPLICATIONS
General Purpose Amplification
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
1. BASE
VCBO
Collector-Base Voltage
120
V
2. EMITTER
VCEO
Collector-Emitter Voltage
120
V
3. COLLECTOR
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
50
mA
PC
Collector Power Dissipation
150
mW
Thermal Resistance From Junction To Ambient
833
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55～+150
℃
RΘJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100µA, IE=0
120
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA, IB=0
120
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA, IC=0
5
V
Collector cut-off current
ICBO
VCB=120V, IE=0
50
nA
Emitter cut-off current
IEBO
VEB=5V, IC=0
50
nA
hFE(1)*
Collector-emitter saturation voltage
VCE=6V, IC=1mA
135
hFE(2)
DC current gain
VCE=6V, IC=0.1mA
100
VCE(sat)
IC=10mA, IB=1mA
900
0.3
Base-emitter voltage
VBE
VCE=6V, IC=1mA
0.55
Transition frequency
fT
VCE=6V, IC=1mA
V
0.65
V
50
Cob
Collector output capacitance
VCB=30V, IE=0, f=1MHz
MHz
2.5
pF
*Pulse test: pulse width ≤350μs, duty Cycle≤ 2.0%.
CLASSIFICATION OF hFE(1)
RANK
D15
D16
D17
D18
RANGE
135–270
200–400
300–600
450–900
MARKING
D15
D16
D17
D18
A,Oct,2010
