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MT45W8MW16BGX-701IT

製品説明
仕様・特性

128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/ Page/Burst CellularRAM 1.5 Memory Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages – 1.70–1.95V VCC – 1.7–3.6V1 VCCQ • Random access time: 70ns • Burst mode READ and WRITE access – 4, 8, 16, or 32 words, or continuous burst – Burst wrap or sequential – MAX clock rate: 133 MHz (tCLK = 7.5ns) – Burst initial latency: 35ns (5 clocks) at 133 MHz – tACLK: 5.5ns at 133 MHz • Page mode READ access – Sixteen-word page size – Interpage READ access: 70ns – Intrapage READ access: 20ns • Low power consumption – Asynchronous READ: <25mA – Intrapage READ: <15mA – Initial access, burst READ: (37.5ns [5 clocks] at 133 MHz) <45mA – Continuous burst READ: <40mA – Standby: <50µA (TYP at 25 °C) – Deep power-down: <3µA (TYP) • Low-power features – On-chip temperature-compensated refresh (TCR) – Partial-array refresh (PAR) – Deep power-down (DPD) mode Options 1 2 3 4 5 6 A LB# OE# A0 A1 A2 CRE B DQ8 UB# A3 A4 CE# DQ0 C DQ9 DQ10 A5 A6 DQ1 DQ2 D VSSQ DQ11 A17 A7 DQ3 VCC E VCCQ DQ12 A21 A16 DQ4 VSS F DQ14 DQ13 A14 A15 DQ5 DQ6 G DQ15 A19 A12 A13 WE# DQ7 H A18 A8 A9 A10 A11 A20 J WAIT CLK ADV# A22 RFU RFU Top View (Ball Down) Options (continued) Designator • Frequency – 66 MHz – 80 MHz – 104 MHz – 133 MHz • Standby power at 85°C – Standard: 200µA (MAX) – Low power: 160µA (MAX) • Operating temperature range – Wireless (–30°C to +85°C) – Industrial (–40°C to +85°C) Designator • Configuration – 8 Meg x 16 – VCC core voltage: 1.70–1.95V – VCCQ I/O voltage: 1.7–3.6V1 • Package – 54-ball VFBGA—“green” • Timing – 70ns access – 85ns access 54-Ball VFBGA Ball Assignment MT45W8MW16B GX 6 8 1 13 None L WT IT Notes: 1. The 3.6V I/O and the 133MHz clock frequency exceed the CellularRAM 1.5 Workgroup specification. –70 –85 Part Number Example: MT45W8MW16BGX-7013LWT PDF: 09005aef80ec6f79/Source: 09005aef80ec6f65 128mb_burst_cr1_5_p26z__1.fm - Rev. H 9/07 EN 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.

ブランド

MICRON

会社名

Micron Technology

本社国名

U.S.A

事業概要

メモリ・ストレージ用の各種半導体メモリ(DRAMやフラッシュメモリとそれらの搭載製品群)を製造・販売している。主力製品は、DRAM, FLASH MEMORY

供給状況

 
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