2SK3399
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3399
Switching Regulator Applications
Unit: mm
•
Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.)
•
High forward transfer admittance: |Yfs| = 5.2 S (typ.)
•
Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)
•
Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
600
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
600
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
10
Pulse
(Note 1)
IDP
40
Drain power dissipation (Tc = 25°C)
PD
100
W
Single pulse avalanche energy
(Note 2)
EAS
363
mJ
Avalanche current
IAR
10
A
Repetitive avalanche energy (Note 3)
EAR
10
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Drain current
A
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.25
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
83.3
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 6.36 mH, RG = 25 Ω,
IAR = 10 A
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
2009-09-29
2SK3399
ID – VDS
ID – VDS
20
Common source
Tc = 25°C
Pulse test
15
15
10
8
7.25
Drain current ID (A)
8
7
6
6. 75
4
6. 5
5.25
6
2
Common source
Tc = 25°C
Pulse test
10
16
Drain current ID (A)
10
8.0
7.75
12
7.5
7.25
8
7.0
6.5
4
VGS = 6.0 V
VGS = 5.5V
0
0
2
4
6
Drain-source voltage
8
0
0
10
10
VDS (V)
20
Drain-source voltage
VDS (V)
Common source
Common source
VDS = 20 V
VDS = 20 V
Pulse test
12
8
25
4
100
0
0
2
Tc = −55°C
4
6
Gate-source voltage
8
5
2
25
0.3
3
4
12
8
16
20
VGS (V)
10
30
1
Drain current ID (A)
VGS = 10 V
15 V
0.1
1
100
Common source
Tc = 25°C
Pulse test
Tc = −55°C
1
2.5
RDS (ON) – ID
Drain-source ON resistance
RDS (ON) (Ω)
(S)
Forward transfer admittance ⎪Yfs⎪
4
5
100
0.3
ID = 10 A
6
Gate-source voltage
1
0.1
0.1
8
VGS (V)
⎪Yfs⎪ – ID
3
Common source
Tc = 25°C
Pulse test
0
0
10
30
Common source
VDS = 20 V
10 Pulse test
50
VDS (V)
10
Drain-source voltage
Drain current ID (A)
16
40
VDS – VGS
ID – VGS
20
30
10
100
Drain current ID (A)
3
2009-09-29
