TPC8003
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
TPC8003
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications
Unit: mm
l Small footprint due to small and thin package
l Low drain−source ON resistance
: RDS (ON) = 5.4 mΩ (typ.)
l High forward transfer admittance : |Yfs| = 21 S (typ.)
l Low leakage current : IDSS = 10 µA (max) (VDS = 30 V)
l Enhancement−mode : Vth = 0.8~2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
30
V
Gate-source voltage
V
VGSS
±20
DC
(Note 1)
ID
13
Pulse
(Note 1)
IDP
52
Drain power dissipation
(t = 10 s)
(Note 2a)
PD
2.4
Drain power dissipation
(t = 10 s)
(Note 2b)
PD
Single pulse avalanche energy
(Note 3)
Drain current
A
JEDEC
―
W
JEITA
―
1.0
W
TOSHIBA
EAS
220
mJ
Avalanche current
IAR
13
A
Repetitive avalanche energy
(Note 2a) (Note 4)
EAR
0.24
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
2002-02-06
TPC8003
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
—
±10
µA
Drain cut−off current
IDSS
VDS = 30 V, VGS = 0 V
—
—
10
µA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
—
—
V
V (BR) DSX
Drain−source breakdown voltage
ID = 10 mA, VGS = −20 V
15
—
—
V
Vth
VDS = 10 V, ID = 1 mA
0.8
—
2.5
V
RDS (ON)
VGS = 4 V, ID = 6.5 A
—
8.3
13
mΩ
RDS (ON)
VGS = 10 V, ID = 6.5 A
—
5.4
7
mΩ
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 6.5 A
10.5
21
—
S
Input capacitance
Ciss
—
4380
—
Reverse transfer capacitance
Crss
—
500
—
Output capacitance
Coss
—
890
—
tr
—
14
—
ton
—
27
—
Gate threshold voltage
Drain−source ON resistance
Rise time
Turn−on time
VDS = 10 V, VGS = 0 V, f = 1 MHz
pF
ns
Switching time
Fall time
tf
—
72
—
toff
—
235
—
Total gate charge (Gate−source
plus gate−drain)
Qg
—
90
—
Gate−source charge
Qgs
—
60
—
Gate−drain (“miller”) charge
Qgd
—
30
—
Turn−off time
VDD ≈ 24 V, VGS = 10 V, ID = 13 A
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse
current
Pulse (Note 1)
Forward voltage (diode)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
—
—
—
52
A
—
—
−1.2
V
VDSF
IDR = 13 A, VGS = 0 V
3
2002-02-06
