PD - 96908E
IRF6644
DirectFET Power MOSFET
l
l
l
l
l
l
l
l
l
Typical values (unless otherwise specified)
RoHs Compliant Containing No Lead and Bromide
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
Compatible with existing Surface Mount Techniques
VDSS
VGS
RDS(on)
100V max ±20V max 10.3mΩ@ 10V
Qg
Qgd
Vgs(th)
11.5nC
3.7V
tot
35nC
DirectFET ISOMETRIC
MN
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SH
SJ
SP
MZ
MN
Description
The IRF6644 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6644 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications
(36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled
with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements,
and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Max.
Parameter
Units
V
VDS
Drain-to-Source Voltage
100
VGS
Gate-to-Source Voltage
±20
e
e
@ 10V f
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
10.3
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
8.3
ID @ TC = 25°C
Continuous Drain Current, VGS
60
IDM
Pulsed Drain Current
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
g
Ãg
82
h
220
mJ
6.2
A
13
0.08
TA= 25°C
(mΩ)
ID = 6.2A
DS(on)
0.06
0.04
Typical R
Typical R DS (on), (Ω)
A
TJ = 125°C
0.02
TJ = 25°C
0.00
4
6
8
10
12
14
VGS, Gate-to-Source Voltage (V)
VGS = 7.0V
11
VGS = 8.0V
VGS = 10V
10
VGS = 15V
9
16
Fig 1. Typical On-Resistance Vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
12
0
4
8
12
16
20
ID, Drain Current (A)
Fig 2. Typical On-Resistance Vs. Drain Current
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 12mH, RG = 25Ω, IAS = 6.2A.
1
6/30/05
