High voltage discharge, High speed switching,
Low Noise (60V, 1A)
2SC5865
Features
1) High speed switching. ( Tf : Typ. : 50ns at IC = 1.0A)
2) Low saturation voltage, typically.
(Typ. : 200mV at IC = 500mA, IB = 50mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Low Noise.
5) Complements the 2SA2092.
Dimensions (Unit : mm)
TSMT3
1.0MAX
2.9
0.85
0.4
0.7
1.6
2.8
(3)
0.3~0.6
0~0.1
(2)
(1)
0.95 0.95
(1) Base
(2) Emitter
(3) Collector
Applications
High speed switching, Low noise
1.9
0.16
Each lead has same dimensions
Abbreviated symbol : VU
Structure
NPN Silicon epitaxial planar transistor
Packaging specifications
Package
Type
Taping
TL
Code
Basic ordering unit (pieces)
3000
2SC5865
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
6
V
IC
1.0
A
ICP
2.0
A
PC
500
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1
mW ∗2
Tj
150
°C
Tstg
−55 to +150
°C
∗1 Pw=10ms
∗2 Each terminal mounted on a recommended land
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2011.03 - Rev.A
