Data Sheet No. PD60147 rev.U
IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF
HIGH AND LOW SIDE DRIVER
Features
• Floating channel designed for bootstrap operation
•
•
•
•
•
•
•
Fully operational to +500V or +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V logic compatible
Separate logic supply range from 3.3V to 20V
Logic and power ground ±5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs
Product Summary
VOFFSET (IR2110)
(IR2113)
500V max.
600V max.
IO+/-
2A / 2A
VOUT
10 - 20V
ton/off (typ.)
120 & 94 ns
Delay Matching (IR2110) 10 ns max.
(IR2113) 20ns max.
Packages
Description
The IR2110/IR2113 are high voltage, high speed power MOSFET and
IGBT drivers with independent high and low side referenced output chan16-Lead SOIC
nels. Proprietary HVIC and latch immune CMOS technologies enable
14-Lead PDIP
IR2110S/IR2113S
ruggedized monolithic construction. Logic inputs are compatible with
IR2110/IR2113
standard CMOS or LSTTL output, down to 3.3V logic. The output
drivers feature a high pulse current buffer stage designed for minimum
driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The
floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which
operates up to 500 or 600 volts.
Typical Connection
up to 500V or 600V
HO
VDD
VDD
VB
HIN
HIN
VS
SD
SD
LIN
LIN
VCC
V SS
VSS
COM
VCC
TO
LOAD
LO
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical
connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
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1
IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF
Dynamic Electrical Characteristics
VBIAS (VCC, VBS, VDD) = 15V, CL = 1000 pF, TA = 25°C and VSS = COM unless otherwise specified. The dynamic
electrical characteristics are measured using the test circuit shown in Figure 3.
Symbol
Definition
Figure Min. Typ. Max. Units Test Conditions
ton
Turn-on propagation delay
7
—
120
150
VS = 0V
toff
Turn-off propagation delay
8
—
94
125
VS = 500V/600V
tsd
Shutdown propagation delay
9
—
110
140
tr
Turn-on rise time
10
—
25
35
tf
Turn-off fall time
11
—
17
25
—
—
—
—
—
—
10
20
MT
Delay matching, HS & LS
turn-on/off
(IR2110)
(IR2113)
ns
VS = 500V/600V
Static Electrical Characteristics
VBIAS (VCC, VBS, VDD) = 15V, TA = 25°C and VSS = COM unless otherwise specified. The VIN, VTH and IIN parameters
are referenced to VSS and are applicable to all three logic input leads: HIN, LIN and SD. The VO and IO parameters are
referenced to COM and are applicable to the respective output leads: HO or LO.
Symbol
Definition
Figure Min. Typ. Max. Units Test Conditions
VIH
Logic “1” input voltage
12
9.5
—
—
VIL
Logic “0” input voltage
13
—
—
6.0
VOH
High level output voltage, VBIAS - VO
14
—
—
1.2
VOL
Low level output voltage, VO
15
—
—
0.1
IO = 0A
ILK
Offset supply leakage current
16
—
—
50
VB=VS = 500V/600V
IQBS
Quiescent VBS supply current
17
—
125
230
VIN = 0V or VDD
IQCC
Quiescent VCC supply current
18
—
180
340
IQDD
Quiescent VDD supply current
19
—
15
30
VIN = 0V or VDD
IIN+
Logic “1” input bias current
20
—
20
40
VIN = VDD
IIN-
21
22
—
7.5
—
8.6
1.0
9.7
VIN = 0V
23
7.0
8.2
9.4
24
7.4
8.5
9.6
25
7.0
8.2
9.4
IO+
Logic “0” input bias current
VBS supply undervoltage positive going
threshold
VBS supply undervoltage negative going
threshold
VCC supply undervoltage positive going
threshold
VCC supply undervoltage negative going
threshold
Output high short circuit pulsed current
26
2.0
2.5
—
IO-
Output low short circuit pulsed current
27
2.0
2.5
—
VBSUV+
VBSUVVCCUV+
VCCUV-
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V
µA
IO = 0A
VIN = 0V or VDD
V
A
VO = 0V, VIN = VDD
PW ≤ 10 µs
VO = 15V, VIN = 0V
PW ≤ 10 µs
3
