CRF03
TOSHIBA Fast Recovery Diode
Silicon Diffused Type
CRF03
Switching Mode Power Supply Applications
•
Unit: mm
Repetitive peak reverse voltage: VRRM = 600 V
•
Average forward current: IF (AV) = 0.7 A
•
Low forward voltage: VFM = 2.0 V (max.)
•
Very fast reverse-recovery time: trr = 100 ns (max.)
•
Suitable for compact assembly due to its small surface-mount
package, the “S−FLATTM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
600
V
Average forward current
IF(AV)
0.7
(Note 1)
A
Peak one-cycle surge forward current
(non-repetitive)
IFSM
10 (50 Hz)
A
Tj
−40~150
°C
Tstg
−40~150
°C
Junction temperature
Storage temperature range
JEDEC
―
JEITA
―
TOSHIBA
Note 1: Ta = 76°C: Device mounted on a ceramic board
Board size: 50 mm × 50 mm,
Soldering Land size: 2 mm × 2 mm
Board thickness: 0.64 t
Rectangular waveform (α = 180°)
3-2A1A
Weight: 0.013 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-07