PreliminaryData Sheet
NE5820M53
R09DS0005EJ0200
Rev.2.00
May 20, 2011
P-channel MOS Field Effect Transistor
for Impedance Converter of Microphone
DESCRIPTION
The NE5820M53 is a P-channel silicon MOSFET designed for use as impedance converter for microphone.
The package is a 3-pin thin-type lead-less minimold, suitable for high-density surface mounting.
FEATURES
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Low noise
: NV = −114 dBV TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 15 kΩ
Low input capacitance
: Ciss = 1.5 pF TYP. @VDD = 2.0 V, RL = 15 kΩ
Low consumption current
: IDD = 85 μATYP. @VDD = 2.0 V, RL = 15 kΩ
High-density surface mounting : 3-pin thin-type lead-less minimold (1.2 × 1.0 × 0.33 mm)
Built-in the capacitor for RF noise immunity
High ESD voltage
APPLICATIONS
• Microphone, Sensor etc.
ORDERING INFORMATION
Part Number
NE5820M53-T1
Order Number
NE5820M53-T1-A
Package
3-pin thin-type
lead-less minimold
(Pb-Free)
Quantity
10 kpcs/reel
Marking
B8
Supplying Form
• Embossed tape 8 mm wide
• Pin 3 face the perforation
side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE5820M53
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark shows major revised points.
The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
R09DS0005EJ0200 Rev.2.00
May 20, 2011
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