1SS419
TOSHIBA Diode
Silicon Epitaxial Schottky Barrier Type
1SS419
High-Speed Switching Applications
Small package
•
Low forward voltage: VF (3) = 0.56 V (typ.)
•
Low reverse current: IR = 5 μA (max)
CATHODE MARK
•
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
VRM
45
V
Reverse voltage
VR
40
V
Maximum (peak) forward current
IFM
200
mA
Maximum (peak) reverse voltage
Average forward current
IO
100
mA
IFSM
1
A
Power dissipation
P*
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Operating temperature range
Topr
−40~100
sESC
°C
Surge current (10 ms)
JEDEC
―
JEITA
―
TOSHIBA
1-1K1A
Weight: 0.0011 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*
Mounted on a glass-epoxy circuit board of 20 × 20 mm,
pad dimensions of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
VF (1)
IF = 1 mA
―
0.28
―
VF (2)
IF = 10 mA
―
0.36
―
VF (3)
IF = 50 mA
―
0.56
0.62
Reverse current
IR
VR = 40 V
―
―
5
μA
Total capacitance
CT
VR = 0, f = 1 MHz
―
15
―
pF
Forward voltage
Equivalent Circuit (Top View)
V
Marking
X
1
2007-11-01
