2SC2712
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC2712
Audio Frequency General Purpose Amplifier Applications
•
High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
•
Unit: mm
Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)
= 0.95 (typ.)
•
High hFE: hFE = 70 to 700
•
Low noise: NF = 1dB (typ.), 10dB (max)
•
Complementary to 2SA1162
•
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
°C
Tstg
−55 to 125
°C
Storage temperature range
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Start of commercial production
1982-10
1
2014-03-01
