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2SC1173
2SC1173Y Transistors Si NPN Power HF BJT Military/High-RelN V(BR)CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.120 h(FE) Max. Current gain.240 @I(C) (A) (Test Condition)500m @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq100M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) Package StyleTO-220 Mounting StyleT Pinout Equivalence Code3-3
SAMSUNG
Samsung Electronics Co., Ltd
韓国
DRAM製品、モバイル機器の製造販売メーカー
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