Variable Capacitance Diodes
MA2Z357J (MA357J)
Silicon epitaxial planar type
Unit : mm
1.25±0.1
For CATV tuner
0.7±0.1
0.35±0.1
1
2
0.5±0.1
0.16+0.1
–0.06
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s Absolute Maximum Ratings Ta = 25°C
5°
150
Junction temperature
Tj
Storage temperature
Tstg
Note) * : RL = 10 kΩ
V
°C
−55 to +150
VRM
V
35
VR
Peak reverse voltage*
Unit
34
Reverse voltage (DC)
Rating
°C
(0.15)
Symbol
0 to 0.1
Parameter
2.5±0.2
1.7±0.1
0 to 0.1
0.4±0.1
M
Di ain
sc te
on na
tin nc
ue e/
d
• Large capacitance ratio
• Small series resistance rD
5°
s Features
1 : Anode
2 : Cathode
SMini2-F1 Package
Marking Symbol: 7K
Parameter
Reverse current (DC)
ce
/D
isc
on
tin
ue
s Electrical Characteristics Ta = 25°C
IR
an
en
int
Ma
Capacitance ratio
Diode capacitance deviation
Series
Conditions
Min
VR = 30 V
CD(0V)*1
Diode capacitance
resistance*2
Symbol
VR = 0 V, f = 1 MHz
Typ
Max
Unit
10
nA
58.0
pF
CD(2V)
VR = 2 V, f = 1 MHz
29.00
34.30
pF
CD(25V)
VR = 25 V, f = 1 MHz
2.53
2.92
pF
CD(10V)
VR = 10 V, f = 1 MHz
6.40
8.32
pF
CD(17V)
VR = 17 V, f = 1 MHz
3.50
4.35
pF
CD(2V)/CD(25V)
∆C
rD
11.0
CD(2V)(10V)(17V)(25V)
2.0
%
CD = 9pF, f = 470MHz
0.54
Ω
Note) 1. Rated input/output frequency: 470 MHz
2. *1 : Measurement at Low Signal Level
*2 : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
Note) The part number in the parenthesis shows conventional part number.
316
