2SD601A
0.1A , 60V
NPN Plastic-Encapsulate Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURE
High forward current transfer ratio hFE
Low collector to emitter saturation voltage VCE(sat)
A
L
3
3
C B
Top View
CLASSIFICATION OF hFE
1
1
Product-Rank
2SD601A-Q
2SD601A-R
Range
160~260
210~340
ZQ
ZR
ZS
E
2
290~460
Marking Code
K
2SD601A-S
2
D
F
PACKAGE INFORMATION
G
REF.
Package
MPQ
LeaderSize
SOT-23
3K
A
B
C
D
E
F
7’ inch
Millimeter
Min.
Max.
2.80
3.04
2.10
2.55
1.20
1.40
0.89
1.15
1.78
2.04
0.30
0.50
H
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.09
0.18
0.45
0.60
0.08
0.177
0.6 REF.
0.89
1.02
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
Ratings
Unit
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
60
50
7
100
200
150, -55~150
V
V
V
mA
mW
°
C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector to Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Collector Output Capacitance
http://www.SeCoSGmbH.com/
04-Mar-2011 Rev. B
Symbol
Min.
Typ.
Max.
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
hFE (1)
hFE (2)
fT
Cob
60
50
7
160
90
-
150
3.5
0.1
100
0.3
460
-
V
V
V
µA
µA
V
MHz
pF
Test Conditions
IC=10µA, IE=0
IC=2mA, IB=0
IE=10µA, IC=0
VCB=20V, IE=0
VEB=10V, IC=0
IC=100mA, IB=10mA
VCE=10V, IC=2mA
VCE=2V, IC=100mA
VCE=10V, IC=2mA, f=200MHz
VCB=10V, IE=0, f=1MHz
Any changes of specification will not be informed individually.
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