HN1D03F
TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D03F
Unit: mm
Ultra High Speed Switching Application
Built in anode common and cathode common.
Unit 1
Low forward voltage
Q1, Q2: VF (3) = 0.90V (typ.)
Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)
Small total capacitance
Unit 2
Low forward voltage
Q1, Q2: CT = 0.9pF (typ.)
Q3, Q4: VF (3) = 0.92V (typ.)
Fast reverse recovery time Q3, Q4: trr = 1.6ns (typ.)
Small total capacitance
Q3, Q4: CT = 2.2pF (typ.)
Unit 1, Unit 2 Common Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Maximum (peak) reverse voltage
Symbol
Rating
Unit
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
300 (*)
mA
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature range
IO
100 (*)
mA
IFSM
2 (*)
A
P
300
mW
Tj
125
°C
Tstg
−55~125
JEDEC
―
JEITA
SC-74
TOSHIBA
Weight: 15 mg (typ.)
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*) This is the Absolute Maximum Ratings of single diode (Q1 or Q2 or Q3 or Q4).
In the case of using Unit 1 and Unit 2 independently or simultaneously, the Absolute Maximum Ratings
per diode is 75% of the single diode one.
Marking
Pin Assignment (Top View)
1
2007-11-01
HN1D03F
3
2007-11-01
