TC7SG32FE
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC7SG32FE
2-Input OR Gate
Features
•
High output current
•
Super high speed operation : tpd = 2.4 ns (typ.)
at VCC = 3.3 V,15pF
•
Operating voltage range
•
5.5-V tolerant inputs
•
3.6-V power down protection output
: ±8 mA (min) at VCC = 3.0 V
: VCC = 0.9 to 3.6 V
(ESV)
Weight: 0.003 g (typ.)
Marking
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Product Name
Symbol
Rating
Unit
Supply voltage
VCC
−0.5 to 4.6
V
DC input voltage
VIN
−0.5 to 7.0
V
−0.5 to 4.6 (Note 1)
V
DC output voltage
VOUT
Input diode current
IIK
−20
Output diode current
IOK
−20
DC output current
IOUT
±25
mA
DC VCC/ground current
ICC
±50
PD
150
mW
Storage temperature
Tstg
−65 to 150
4
Pin Assignment (top view)
mA
Power dissipation
W
°C
−0.5 to VCC + 0.5 (Note 2)
mA
(Note 3)
IN B
1
IN A
2
GND
3
5 VCC
mA
4
OUT Y
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1:
VCC = 0V
Note 2:
High or Low state. Do not exceed IOUT of absolute maximum ratings.
Note 3:
VOUT < GND
1
2009-09-09
TC7SG32FE
Electrical Characteristics
DC Characteristics
Characteristics
Symbol
Ta = 25°C
Test Condition
Ta = −40 to 85°C
VCC
⎯
⎯
VCC
VCC
× 0.7
⎯
⎯
VCC
× 0.7
⎯
1.4 to 1.6
VCC
× 0.65
⎯
⎯
VCC
× 0.65
⎯
VCC
× 0.65
⎯
⎯
VCC
× 0.65
⎯
1.7
⎯
⎯
1.7
⎯
2.0
⎯
⎯
2.0
⎯
⎯
⎯
GND
⎯
GND
1.1 to 1.3
⎯
⎯
VCC
× 0.3
⎯
VCC
× 0.3
1.4 to 1.6
⎯
⎯
VCC
× 0.35
⎯
VCC
× 0.35
⎯
Unit
⎯
0.9
⎯
Max
3.0 to 3.6
VIL
Min
2.3 to 2.7
Low-level input
voltage
Max
1.65 to
1.95
⎯
Typ
1.1 to 1.3
VIH
Min
0.9
High-level input
voltage
VCC (V)
VCC
× 0.35
V
V
0.8
0.9
0.75
⎯
⎯
0.75
⎯
1.1 to 1.3
VCC
× 0.75
⎯
⎯
VCC
× 0.75
⎯
IOH = −1.7 mA
1.4 to 1.6
VCC
× 0.75
⎯
⎯
VCC
× 0.75
⎯
1.65 to
1.95
VCC
-0.45
⎯
⎯
VCC
-0.45
⎯
2.3 to 2.7
2.0
⎯
⎯
2.0
⎯
3.0~3.6
2.48
⎯
⎯
2.48
⎯
IOL = 0.02 mA
0.9
⎯
⎯
0.1
⎯
0.1
IOL = 0.3 mA
1.1 to 1.3
⎯
⎯
VCC
× 0.25
⎯
VCC
× 0.25
IOL = 1.7 mA
1.4 to 1.6
⎯
⎯
VCC
× 0.25
⎯
VCC
× 0.25
IOL = 3.0 mA
1.65 to
1.95
⎯
⎯
0.45
⎯
0.45
IOL = 4.0 mA
2.3 to 2.7
⎯
⎯
0.4
⎯
0.4
IOL = 8.0 mA
IIN
0.7
⎯
IOH = −8.0 mA
Input leakage current
⎯
0.8
IOH = −4.0 mA
VIN = VIL
0.7
⎯
IOH = −3.0 mA
VOL
⎯
⎯
IOH = −0.3 mA
Low-level output
voltage
⎯
IOH =−0.02 mA
VIN = VIH
or VIL
⎯
3.0 to 3.6
VOH
⎯
VCC
× 0.35
2.3 to 2.7
High-level output
voltage
1.65 to
1.95
3.0 to 3.6
⎯
⎯
0.4
⎯
0.4
0 to 3.6
⎯
⎯
±0.1
⎯
±1.0
μA
0
⎯
⎯
1.0
⎯
10.0
μA
3.6
⎯
⎯
1.0
⎯
10.0
μΑ
VIN = 0 to 5.5V
Power off leakage
current
IOFF
VIN = 0 to 5.5V
VOUT = 0 to 3.6V
Quiescent supply
current
ICC
VIN = VCC or GND
3
V
V
2009-09-09
