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部品型式

1S1885Q

製品説明
仕様・特性

1S1885A,1S1887A,1S1888A TOSHIBA Rectifiers Silicon Diffused Type 1S1885A, 1S1887A, 1S1888A General Purpose Rectifier Applications • Unit: mm Average Forward Current: IF (AV) = 1.2 A (Ta = 60°C) • Repetitive Peak Reverse Voltage: VRRM = 100 V, 400 V, 600 V • Peak One Cycle Surge Forward Current (non repetitive) : IFSM = 100 A (50 Hz) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating 1S1885A Repetitive peak reverse voltage Unit 100 VRRM 1S1887A V 400 1S1888A 600 Average forward current (Ta = 60°C) IF (AV) Peak one cycle surge forward current (non repetitive) IFSM 1.2 A 100 (50 Hz) A 110 (60 Hz) Tj Storage temperature range −40 to 150 °C Tstg Junction temperature −40 to 150 °C JEDEC DO-15 JEITA SC-39 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 3-3B1A temperature, etc.) may cause this product to decrease in the Weight: 0.42 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Peak forward voltage VFM IFM = 5 A ⎯ ⎯ 1.0 V Repetitive peak reverse current IRRM VRRM = Rated ⎯ ⎯ 10 μA DC ⎯ ⎯ 100 °C /W Thermal resistance (junction to ambient) Rth (j-a) Marking Abbreviation Code 88A 1S1885A 87A 1S1887A 88A Lot No. Part No. 85A Part No. (or abbreviation code) 1S1888A A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-11-06 1S1885A,1S1887A,1S1888A Ta max – IF (AV) ambient 200 30 Lead length 10mm Copper plate 10 150 Tj = 25°C 5 3 1 0.5 0.3 0.4 0.8 1.2 1.6 2.0 2.4 Instantaneous forward voltage (V) 2.8 Solder land size 120 Capacitive load 40 0 0 (A) Surge forward current IFSM 100 10 1 0.1 1 0.4 0.6 0.8 1.0 1.2 (A) Surge forward current (non-repetitive) 1000 0.01 0.2 Average forward current IF (AV) rth (j-a) – t 0.1 0.001 5 mm × 5 mm 80 vF 5000 Transient thermal impedance rth (j-a) (°C /W) Substrate thickness 1.6 mm Resistive or inductive load 160 Maximum allowable temperature Instantaneous forward current iF – vF 50 10 100 1000 Time t (s) 120 Tj = 25°C 100 80 60 60 40 50 Hz 20 1 3 5 10 30 50 100 Number of cycles 3 2006-11-06

ブランド

TOSHIBA

会社名

株式会社 東芝セミコンダクター&ストレージ社

本社国名

日本

事業概要

半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI

供給状況

 
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データシート
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型式 数量 D/C・lead 備考 選択
1S1885Q 7個 N/A N/A
1S1885(Q) 7個 N/A  
1S1885Q 1800個 2008+  
1S1885Q 200個 2008+  
1S1885Q 200個 2008+  

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