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DATA DATA
PRELIMINARY SHEET SHEET
Silicon Transistor
2SA1977
PNP EPITAXIAL SILICON TRANSISTOR
MICROWAVE AMPLIFIER
FEATURES
_
2.8+0.2
High fT
0.4 +0.1
–0.05
•
PACKAGE DIMENSION (in millimeters)
fT = 8.5 GHz TYP.
•
High gain
0.65 +0.1
–0.15
1.5
| S21e | = 12.0 dB TYP. @f = 1.0 GHz, VCE = −8 V, IC = −20 mA
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Unit
VCB0
−20
V
Collector to Emitter Voltage
VCE0
−12
V
Emitter to Base Voltage
VEB0
−3.0
V
Collector Current
IC
−50
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Marking
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter
Symbol
0.16 +0.1
–0.06
Collector to Base Voltage
Test Conditions
0 to 0.1
Rating
0.3
Symbol
1.1 to 1.4
Parameter
3
1
0.4 +0.1
–0.05
Equivalent NPN transistor is the 2SC3583.
2
0.95
High-speed switching characterstics
•
_
2.9+0.2
•
0.95
2
PIN CONNECTIONS
1: Emitter
2: Base
3: Collector Marking; T92
MIN.
TYP.
MAX.
Unit
Collector Cutoff Current
ICB0
VCB = −10 V
−0.1
µA
Emitter Cutoff Current
IEB0
VEB = −1 V
−0.1
µA
DC Current Gain
hFE
VCE = −8 V, IC = −20 mA
20
Gain Bandwidth Product
fT
VCE = −8 V, IC = −20 mA, f = 1 GHz
6.0
Collector Capacitance
Cre*
Insertion Power Gain
| S21e |
Noise Figure
NF
VCB = −10 V, IE = 0, f = 1 MHz
2
VCE = −8 V, IC = −20 mA, f = 1.0 GHz
VCE = −8 V, IC = −3 mA, f = 1 GHz
100
8.5
GHz
0.5
8.0
1
12.0
pF
dB
1.5
3
dB
* Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.
hFE Classification
Rank
FB
Marking
T92
hFE
20 to 100
Document No. P10925EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
©
1996
