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TC7SZ00AFETE85L,F
TC7SZ00AFE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ00AFE 2 Input NAND Gate Features • High output drive: • • Super high speed operation: tPD = 2.4 ns (typ.) at VCC = 5 V, 50 pF • Operation voltage range: VCC (opr) = 1.8~5.5 V ±24 mA (min) at VCC = 3 V • Supply voltage data retention: VCC = 1.5~5.5 V • 5.5-V tolerant inputs. • Matches the performance of TC74LCX series when operated at 3.3-V VCC (ESV) Weight: 0.003 g (typ.) Marking Pin Assignment (top view) Product name R 5 VCC IN B 1 1 IN A 2 GND 3 4 OUT Y Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage range VCC −0.5~6 V DC input voltage VIN −0.5~6 V VOUT −0.5~VCC + 0.5 V Input diode current IIK −20 mA Output diode current IOK ±20 mA DC output current IOUT ±50 mA DC VCC/ground current ICC ±50 mA Power dissipation PD 150 mW Storage temperature Tstg −65~150 °C TL 260 °C DC output voltage Lead temperature (10 s) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-11-01
TOSHIBA
株式会社 東芝セミコンダクター&ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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