SSM3J120TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J120TU
○ Power Management Switch Applications
○ High-Current Switching Applications
Unit: mm
1.5 V drive
Low on-resistance
2.1±0.1
Ron = 140 mΩ (max) (@VGS = -1.5 V)
Ron = 78 mΩ (max) (@VGS = -1.8 V)
Ron = 49 mΩ (max) (@VGS = -2.5 V)
Ron = 38 mΩ (max) (@VGS = -4.0 V)
Absolute Maximum Ratings (Ta = 25°C)
Symbol
Unit
VDS
Drain-Source voltage
Rating
-20
V
±8
ID
-4.0
Pulse
IDP
-8.0
PD (Note 1)
800
PD (Note 2)
500
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55~150
°C
Drain power dissipation
0.7±0.05
VGSS
Drain current
3
2
V
DC
Gate-Source voltage
1
0.166±0.05
Characteristics
+0.1
0.3 -0.05
2.0±0.1
1.7±0.1
0.65±0.05
•
•
A
mW
UFM
1. Gate
2. Source
3. Drain
Note:
Using continuously under heavy loads (e.g. the application of
JEDEC
―
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
―
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-2U1A
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 6.6mg (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1 : Mounted on ceramic board
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2)
Note 2 : Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)
Electrical Characteristics (Ta = 25°C)
Characteristics
Drain-Source breakdown voltage
Symbol
Test Condition
Min
Typ.
Max
V (BR) DSS ID = −1 mA, VGS = 0
−20
⎯
⎯
V (BR) DSX ID = −1 mA, VGS = +8 V
−12
⎯
⎯
Unit
V
Drain cut-off current
IDSS
VDS = −20 V, VGS = 0
⎯
⎯
−10
μA
Gate leakage current
IGSS
VGS = ±8 V, VDS = 0
⎯
⎯
±1
μA
−0.3
⎯
−1.0
V
S
Gate threshold voltage
Vth
RDS (ON)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Switching time
Turn-on time
ton
Turn-off time
toff
12.1
⎯
(Note 3)
⎯
28
38
ID = -2.0 A, VGS = -2.5 V
(Note 3)
⎯
34
49
ID = -1.0 A, VGS = -1.8 V
(Note 3)
⎯
47
78
ID = -0.3 A, VGS = -1.5 V
Drain-Source ON-resistance
6.1
ID = -3.0 A, VGS = -4.0 V
Forward transfer admittance
⏐Yfs⏐
VDS = −3 V, ID = −1 mA
VDS = -3 V, ID = -2.0 A
(Note 3)
140
(Note 3)
VDS = −10 V, VGS = 0
f = 1 MHz
⎯
60
⎯
1484
⎯
pF
⎯
185
⎯
pF
pF
⎯
169
⎯
VDD = −10 V, ID = −2.0 A
⎯
67
⎯
VGS = 0 ~ −2.5 V, RG = 4.7 Ω
⎯
92
⎯
1
mΩ
ns
2007-11-01
SSM3J120TU
ID – VDS
-8
-2.5 V
-1.8 V
ID – VGS
-10000
Common Source
VDS = -3 V
-1.5 V
(mA)
-100
ID
-4
Drain current
Drain current
ID
(A)
-1000
-6
VGS = -1.2 V
-2
-10
Ta = 85 °C
−25 °C
-1
25 °C
-0.1
0
Common Source
Ta = 25 °C
0
-0.5
-1
-1.5
Drain - Source voltage
VDS
-0.01
0
-2
-0.2
(V)
-0.4
Drain – Source on-resistance
RDS (ON) (mΩ)
Drain – Source on-resistance
RDS (ON) (mΩ)
60
50
25 °C
Ta = 85 °C
30
20
−25 °C
10
0
-2
-4
-6
Gate - Source voltage
(V)
Common Source
60
50
25 °C
40
Ta = 85 °C
30
20
−25 °C
10
0
VGS (V)
-2
-4
-6
Gate - Source voltage
RDS (ON) – ID
-8
VGS (V)
RDS (ON) – Ta
100
Common Source
80
Common Source
Ta = 25 °C
Drain – Source on-resistance
RDS (ON) (mΩ)
Drain – Source on-resistance
RDS (ON) (mΩ)
-1.6
70
0
-8
90
70
60
VGS = -1.5 V
50
-1.8 V
40
-2.5 V
30
-4.0 V
20
10
0
VGS
-1.4
ID = -2.0 A
80
70
0
-1.2
RDS (ON) – VGS
Common Source
40
-1.0
90
ID = -0.3 A
80
-0.8
Gate - Source voltage
RDS (ON) – VGS
90
-0.6
80
ID = -0.3 A / VGS = -1.5 V
-1.0 A / -1.8 V
60
40
-3.0 A / -4.0 V
20
-2.0 A / -2.5 V
0
-2
-4
Drain current
-6
ID
0
−50
-8
(A)
0
50
Ambient temperature
3
100
Ta
150
(°C)
2007-11-01
