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TC7SZ08AFETE85L,F
TC7SZ08AFE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ08AFE 2 Input AND Gate Features • High output drive: • Super high speed operation: tpd 2.7 ns (typ.) at VCC = 5 V, 50 pF • Operation voltage range: VCC (opr.) = 1.8~5.5 V ±24 mA (min) at VCC = 3 V • Supply voltage data retention: VCC = 1.5~5.5 V • 5.5-V tolerant inputs • Matches the performance of TC74LCX series when operated at 3.3 -V VCC (ESV) Marking Weight: 0.003 g (typ.) Pin Assignment (top view) Product name R 2 5 VCC IN B 1 IN A 2 GND 3 4 OUT Y Absolute Maximum Ratings (Ta = 25°C) Symbol Rating Unit Supply voltage range Characteristics VCC −0.5~6 V DC input voltage VIN −0.5~6 V DC output voltage VOUT −0.5~VCC + 0.5 V Input diode current IIK −20 mA Output diode current IOK ±20 mA DC output current IOUT ±50 mA DC VCC/ground current ICC ±50 mA Power dissipation PD 150 mW Storage temperature Tstg −65~150 °C TL 260 °C Lead temperature (10 s) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-11-01 TC7SZ08AFE Electrical Characteristics DC Characteristics Characteristics Symbol Test Condition Ta = 25°C Ta = −40~85°C Typ. Max Min Max 1.8 0.75 × VCC ⎯ ⎯ 0.75 × VCC 2.3-5.5 0.7 × VCC ⎯ ⎯ 0.7 × VCC ⎯ 1.8 ⎯ ⎯ 0.25 × VCC ⎯ 0.25 × VCC 2.3-5.5 ⎯ ⎯ 0.3 × VCC ⎯ 0.3 × VCC 1.7 1.8 ⎯ 1.7 ⎯ 2.3 2.2 2.3 ⎯ 2.2 ⎯ 3.0 2.9 3.0 ⎯ 2.9 ⎯ 4.5 4.4 4.5 ⎯ 4.4 ⎯ IOH = −8 mA 2.3 1.9 2.15 ⎯ 1.9 ⎯ 3.0 2.4 2.8 ⎯ 2.4 ⎯ IOH = −24 mA 3.0 2.3 2.68 ⎯ 2.3 ⎯ IOH = −32 mA 4.5 3.8 4.2 ⎯ 3.8 ⎯ 1.8 ⎯ 0 0.1 ⎯ 0.1 2.3 ⎯ 0 0.1 ⎯ 0.1 3.0 ⎯ 0 0.1 ⎯ 0.1 4.5 ⎯ 0 0.1 ⎯ 0.1 IOL = 8 mA 2.3 ⎯ 0.1 0.3 ⎯ 0.3 IOL = 16 mA 3.0 ⎯ 0.15 0.4 ⎯ 0.4 IOL = 24 mA 3.0 ⎯ 0.22 0.55 ⎯ 0.55 IOL = 32 mA 4.5 ⎯ 0.22 0.55 ⎯ 0.55 ⎯ VIH ⎯ VIL IOH = −100 μA High-level output voltage VOH VIN = VIH IOL = 100 μA Low-level output voltage VOL VIN = VIH or VIL Unit ⎯ IOH = −16 mA Low-level input voltage Min 1.8 High-level input voltage VCC (V) V V V V Input leakage current IIN VIN = 5.5 V or GND 0-5.5 ⎯ ⎯ ±1 ⎯ ±10 μA Quiescent supply current ICC VIN = VCC or GND 5.5 ⎯ ⎯ 2 ⎯ 20 μA 3 2007-11-01
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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